650V Silicon Carbide Schottky in TO-220AC package

With the 650V SiC Schottky Barrier Diodes provide zero reverse recovery current, low forward voltage drop, temperature independent switching behavior, high surge current capability, and excellent thermal performance. In addition, silicon carbide technology can provide lower conduction losses and deliver stability and high ruggedness throughout -55°C to +175°C operating temperature range.

650V Silicon Carbide Schottky in TO-247AC package

With the 650V SiC Schottky Barrier Diodes Viitor launched . provide zero reverse recovery current, low forward voltage drop, temperature independent switching behavior, high surge current capability, and excellent thermal performance. In addition, silicon carbide technology can provide lower conduction losses and deliver stability and high ruggedness throughout -55°C to +175°C operating temperature range.